james wrote:
Prefer FETs even with their cost. They suffer less from thermal
runaway as bipolar designes do. Bias network is easier to design.

Major disadvantage to FETS are the inputs are very static sensitive.
SO some means of ESD protection is needed that wont h inder RF
performance.

But what about B+ requirements... power FETs are usually 28V or
higher... while the bipolar allows for mobile use at much lower
voltages. The FETs are also cost prohibitive as far as I'm concerned.

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