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Old July 22nd 04, 03:46 PM
John Woodgate
 
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I read in sci.electronics.design that Paul Burridge
wrote (in 61kvf05660gk62pnm7o3bthepkujnep
) about 'The bi-polar transistor at RF', on Thu, 22 Jul
2004:
Er, yes, but I'm only interested in the *internal* characteristics of
the device here, so even the bonding wires' inductance isn't an issue.
Thanks for giving me the chance to clarify, though.


A bit of the emitter lead is inside the encapsulation, and a bit is on
the die.
--
Regards, John Woodgate, OOO - Own Opinions Only.
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