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"Tarmo Tammaru" wrote
"Reg Edwards" wrote What's the problem? You have just designed the PA. You are familiar with its very simple internal circuitry. You have its component values, including the active ones. Hasn't it yet occurred to you engineering Ph.D's all you have to do is calculate it? [Source resistance]. Reg, I am *not* a PhD, but, I can tell you what the problem is. You don't know what the transistor's Norton equivalent collector (drain) resistance is at DC, let alone RF. It is generally not on data sheets. They will often specify an "output impedance". This is a convenience for people who *think* they are doing conjugate matching. The real component of this has absolutely nothing to do with a particular device, outside of second order effects caused by series lead inductances. Check out Motorola application notes AN282A, 721, and 1033. The following is a quote from AN1033: "The output impedance of a microwave power transistor is usually defined as the conjugate of the load impedance required to achieve the desired performance. A typical output equivalent circuit is shown in Fig1. { Shows current source in parallel with Cout and resistor labeled transformed load impedance. From these two nodes there are inductor Lc and Lcom going to the output terminals}. The capacitor Cout is nearly equal to the collector - base capacitance Cob specified for the selected transistor. Lc is the inductance of the bond wire used to bridge from the collector metallization area to the package output lead, and Lcom represents the inductive effects of the common element bond wire" "For correct operation of the transistor, the ultimate load impedance must be transformed to a real impedance across the current generator. This real impedance is determined by RL = (Vcc - VCEsat)^2/(2Pout) The load impedance presented to the package terminals will contain the real impedance at the current generator, transformed to a lower value by the low pass section formed by Cout and the parasitic inductances Lc and Lcom. Usually the reactive part of the load impedance is made inductive to tune out the residual capacitance of the device." One of the other ap notes mentioned collector resistance to the extent that it is "high". This kind of analysis is not limited to transistors. For kicks, I calculated the load for an 813 tube, and got the same value as a book I was reading, which used a roundabout method. The other ap note also made a point of the fact that if you were actually conjugate matched, the efficiency could never be more than 50%. ================================== Tam, The only problem is that caused by entirely unnecessary complications introduced by people being too clever. First design a single-ended, class-A, audio amplifier like a 6V6 beam-tetrode tube plus a transformer to drive an 8-ohm speaker. Then calculate the source resistance seen from the speaker looking back into the amplifier. To save time searching for manufacturers data, assume: DC plate supply is 250 volts. Peak signal at plate 200 volts. Internal plate resistance, from mnfr's curves, is 100 K-ohms. Audio power output = 5watts into 8-ohms load. Peak volts across load = 8.944 volts peak. Transformer turns ratio = 22.36 Then ask yourself "Is the source resistance of the amplifier in the same ball-park as the 8-ohm speaker ?" Is there anything like a conjugate match ? Which is what it's all about. For Class-B and Class-C conditions, just multiply internal plate resistance by a constant which depends on plate current operating angle. Curvature of tube characteristics can be taken into account for a higher order of accuracy. And all this was sorted out in the early 1920's. Modern Western radio engineers' education seems to have been sadly neglected. The next generation's primary education is taking place in the rat-ridden sewers of Rio and in the medicine-less, water-less and electricity-less ruins of Baghdad. Cecil, in the meantime I'm looking forward to the day when Texas vintages appear on the shelves of my local supermarket. ;o) --- Reg. |
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