Most RF power transistors in the 50-100 watt range already have an
internal emitter resistor. It's usually less than a tenth of an
ohm,
perhaps only a few hundreths of an ohm. Its purpose is to prevent
thermal runaway and make the device more tolerant of overload due
to
momentary impedance mismatches. Internal resistors have an extemely
low inductance. They are NOT wirewound. They are an integral part
of
the transistor construction and material. The manufacturer may not
mention their existence in his catalogue or data book.

RF power transistors are usually multi-emitter devices - all in
parallel. Each emitter has its own individual series resistor.

Such low-value external resistors are not available as discrete
wire-ended circuit components. Inductance would be too high at HF
and
an invitation to self oscillation. Don't attempt to use normal
circuit
components in emitter leads unless a transistor manufacturer
specifically recommends them.

HF and VHF power transistors are very fast fuses. They are worked
very
close to their maximum voltage and current ratings.
----
Reg, G4FGQ

yup!