On Thu, 22 Jul 2004 15:46:25 +0100, John Woodgate
wrote:

I read in sci.electronics.design that Paul Burridge
wrote (in 61kvf05660gk62pnm7o3bthepkujnep
) about 'The bi-polar transistor at RF', on Thu, 22 Jul
2004:
Er, yes, but I'm only interested in the *internal* characteristics of
the device here, so even the bonding wires' inductance isn't an issue.
Thanks for giving me the chance to clarify, though.

A bit of the emitter lead is inside the encapsulation, and a bit is on
the die.

Thank you, John, that gives me another chance to re-state the question
more succinctly. I'm not concerned with inductances here at all,
though.
Does the Ebers-Moll equation hold good at UHF+, provided the value one
inserts for Vbe is adjusted to account for the loss of signal voltage
the B/E junction will suffer as much of it (the applied signal
voltage) is shunted around it via the device's internal capacitances?

There! I think I've nailed it this time!

--

"What is now proved was once only imagin'd." - William Blake, 1793.