John Fields wrote:

On Fri, 27 Aug 2004 19:28:39 +0100, Paul Burridge
wrote:


-- snip --
The only sensible way to do it AFAICS is to operate the MOSFET in
class C as a high speed switch and reconstruct the pulsed output into
a sine wave carrier by means of a suitable tuned circuit. I wouldn't
consider driving a MOSFET for RF use in any other way. The efficiency
should be pretty darned good, too.


---
That doesn't make any sense to me.

Unless things have changed pretty drastically from how they were when
I was doing RF, class "C" was pretty much relegated to FM, so that
when you hit PTT, you banged the hell out of the final and filtered
the hell out of the carrier, which went to maximum amplitude and
stayed there, and the information was put on the constant amplitude
carrier by varying its frequency (or phase).

AM and SSB finals were _always_ linear amps and, like John said, the
_amplitude_ of the carrier/sideband(s) followed the amplitude of the
modulating audio precisely.

Whether you use a MOSFET as a switch or as a resistive element
yielding a linearly varying output depends on how you tailor the
characteristics of the MOSFET to fit the application. After all,
there are lots of linear audio amps out there with MOSFET class A and
class B finals, aren't there? So why shouldn't there be linear MOSFET
RF amps as well?

Well, AM tube finals were often operated class C with the modulation
applied to the plate supply. This is harder to do with silicon because
the varying collector voltage modulates the collector-base capacitance
and causes weird phase shifts.

And there are linear MOSFET RF amps; they're necessary for single-sideband.

--

Tim Wescott
Wescott Design Services
http://www.wescottdesign.com