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On Wed, 29 Dec 2004 07:01:45 -0800, Frank Gilliland
wrote: On Wed, 29 Dec 2004 13:37:17 GMT, Lancer wrote in htb5t058gbfee852kcbtht6vcul2jud5lu@2355323778 : snip Ok Lancer (whichever one you are); The same Lancer that has been here all along.. In your headers I saw several different servers, two different newsreaders and two domain addresses (rock.com & ock.com). With all the forgeries in this group it's easy to see how one might think your posts are being made by more than one person. Don't know where the ock.com came from, maybe I screwed up when I set a news client up. I do understand what your saying tho. Please explain, (CE bias can be as high as 3-4 volts under heavy load. Isn't that set by the operating point set by bias you put on the base? A bipolar transistor requires both a BE bias -and- a CE bias. Ok, thats he part that I'm not understanding. (We are talking common emitter, right?) Transistors don't require a CE bias. In the case of an NPN just Pos voltage on the collector and Neg on the emitter. The CE voltage is set by the bias on the BE junction. Remember that a bipolar transistor is a -current- amplifier, not a voltage amplifier. Saturation is a characteristic of the collector's -current-; the CE bias is a characteristic of it's voltage. The two terms are often used synonymously and saturation curves are really CE bias curves, but that's because 'saturation' has two definitions: First, it is the point where a device will no longer respond to an increase at the input. This can happen for many reasons. But in this case it's because the output has hit the rail, and the rail is the CE bias (explained later). Second, it's the point where a transistor is driven so hard that it causes a forward bias of the BC junction (bad news). Now..... I'm not trying to dumb this down, but simplification might help to consolidate our differences: Consider a transistor configured as a DC constant-current source; i.e, base bias is fixed and therefore the collector current is constant. Let's say the collector current is fixed at 1 amp. That current is constant regardless of the collector voltage..... to a point: Let's also assume that the CE bias is 2 volts when collector current is 1 amp. If the collector voltage drops below 2 volts then the collector current will drop. Therefore, the voltage required to put the transistor into the constant-current part of the curve is the CE bias. Now let's configure the amplifier for Class B, use a 12 volt supply and feed it some AC. If the peak output current is 1 amp then the maximum possible voltage output of the amp will be 12 volts minus the CE bias of 2 volts, or 10 volts. If the CE bias increases to 4 volts at 10 amps (realistic value) then the peak voltage can be no larger than 8 volts, or 2/3 of the power supply voltage. Ok, now let's double the power supply voltage. Since the collector current doesn't change then the CE bias doesn't change. The output can now swing 20 volts, or 24 volts minus the CE bias. And this is 83.3% of the ps voltage. Since the current is the same regardless of ps voltage, the efficiency is 25% better with the -higher- ps voltage. snip Or are you refering to the losses in the transistor when its fully turned on? Not necessarily. CE bias increases with collector current regardless of saturation (and RF bipolars don't saturate easily). But if the supply voltage can be increased while maintaining the same collector current (by changing the BE bias), the loss due to CE bias is not changed, and that loss is therefore made to be a smaller percentage of the output power. IOW, the transistor is more efficient with a higher supply voltage. If you don't change the CE current, the actual loss in the transistor hasn't changed. If you increase the supply voltage it will be a smaller percentage than it was before. Exactly. A smaller percentage of the input power, and therefore more efficient. Thanks Frank. |
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